Computer simulation of epitaxial crystal growth on (001) of silicon
1994
Using Monte Carlo method the growth of layers on (001) plane of silicon was simulated. At a slow deposition rate, one layer by one layer growth was observed, but at a faster deposition rate, next (001) layer deposition was started before completing a (001) layer. At a faster deposition rate, island growth was observed.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI