Comparison of electrical and reliability characteristics of different 14 /spl Aring/ oxynitride gate dielectrics

A comparison of RTNO, N/sub 2/O and N/sub 2/O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 /spl Aring/ is explored. The N/sub 2/O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices.