High-reliability low-threshold InGaAsP ridge waveguide lasers emitting at 1.3 μm

This paper describes the structure and performance of a high-reliability ridge waveguide laser suitable for very-high-data-rate transmission. The device is grown on an InP substrate using planar LPE with sulfur-doped InP. The ridge structure is formed by wet chemical etching two channels, as shown in Fig. 1.