Vertical N-channel FLIMOSFETs for future 12 V/42 V dual batteries automotive applications

In this paper, new Vertical FLI-MOSFETs dedicated to automotive applications are proposed for the first time: in these devices, only one P Floating Island is introduced in the N/sup -/ epitaxial region. In term of "specific on-resistance/breakdown voltage" trade-off, it is shown that the FLIMOSFET exhibits better performance than the conventional VDMOSFET and approaches the well-known "silicon limit". This is due to the strong reduction of access (R/sub a/.S) and drift (R/sub b/.S) resistances, because of the increase in the N/sup -/ epitaxial layer doping concentration. In other words, the FLIMOSFET appears to be one of the best Power MOSFET in low voltage applications.