Reliability Study of GaN-onSiC HEMT RF Power Amplifiers

Jenny Lang,Jang-Kwon Lim,J. Hellen,Torbjorn M.J. Nilsson,Bo Schodt,Ralf Poder,Ilja Belov,Mietek Bakowski,Peter Leisner

Reliability Study of GaN-onSiC HEMT RF Power Amplifiers

2018

Jenny Lang
Jang-Kwon Lim
J. Hellen
Torbjorn M.J. Nilsson
Bo Schodt
Ralf Poder
Ilja Belov
Mietek Bakowski
Peter Leisner

The RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMSin SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) a ...

Keywords:

Lead (electronics)
Materials science
Amplifier
Quad Flat No-leads package
Optoelectronics
High-electron-mobility transistor
RF power amplifier
reliability study

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