Spin‐Dependent Transport Of Holes In Silicon Quantum Wells Confined By Superconductor Barriers

We present the findings of spin‐dependent single‐hole and pair‐hole transport across the p‐type high mobility silicon quantum well (Si‐QW) confined by the superconductor delta‐barriers on the n‐type Si (100) surface. The oscillations of the conductance in normal state and the zero‐resistance supercurrent in superconductor state as a function of the bias voltage are found to be correlated by on‐ and off‐resonance tuning the two‐dimensional subbands of holes with the Fermi energy in the superconductor barriers.