The method of manufacturing a semiconductor device, and the semiconductor substrate processing methods

PROBLEM TO BE SOLVED: To suppress side etching in executing dry etching. SOLUTION: A method for manufacturing a semiconductor element includes: placing a semiconductor substrate such as an SOI substrate having a mask corresponding to a groove for forming a semiconductor element on one surface of the semiconductor film and an insulation film on the other surface of the semiconductor film, on a lower electrode of a dry etching apparatus; pressing the semiconductor substrate via an insulation member by a metallic clamp having a contact arranged between itself, and a lower electrode and having the potential substantially the same as that of the lower electrode and fixing the semiconductor substrate to the lower electrode; and executing dry etching using the insulation film as an etching stopper layer. COPYRIGHT: (C)2010,JPO&INPIT