Intensity and Phase Modulators in Epitaxial III-V Layers Directly Grown on Silicon Operating at 1.55 µm

We report for the first time electro-optic phase and amplitude modulators in GaAs/AlGaAs epitaxial layers grown on Si substrates. Intensity modulators with 4-mm long electrodes have Vπ of 3.59V corresponding to 1.44 V-cm modulation efficiency.