Metalorganic chemical vapor deposition of ZnSe thin films on ITO/ glass substrates

Abstract High quality ZnSe/ITO/glass thin films have been investigated by low-pressure metalorganic chemical vapor deposition. The full-width at half maximum (FWHM) of the cubic (111) plane depends on the [H 2 Se]/[DMZn] ratio and substrate temperature and the value of FWHM was less than 0.4°. The lattice constant and energy gap obtained were 5.6863 A and 2.6957 eV, respectively. Specular ZnSe/ITO/glass can be grown in our system. A uniform thickness within 3% over the whole substrate (250 x 180 mm 2 ) was obtained.