RIETVELD REFINEMENT AND STRAIN ANALYSIS OF SnSeNi0.4 CRYSTAL

2016 
Layered semiconductor crystals show important application in the fabrication of energy converting devices. SnSeNi 0.4 is layered semiconductor crystal grown by Direct Vapour Transport (DVT) technique. Structural characterizations like X-ray diffraction (XRD) with Rietveld refinement, strain analysis from Gaussian, Lorentzian and Pseudo-Voigt profile analysis , Energy dispersive analysis of X-rays (EDAX) and surface microstructure topography has also been carried out.
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