New, more accurate methods for the investigation of the free carrier concentration and mobility by 1ƒ noise measurements

Abstract The proposed new method can be applied for materials that obey the Hooge-Vandamme relation. The result for n , given by the method is independent of the actual mobility μ, and weakly depends on the noise factor α H . Almost the same procedure can be applied for the investigation of μ. The problem of the temperature dependence investigations is also considered.