Nonvolatile memory devices including charge storage layers

Non-volatile memory device includes a charge storage layer between the gate electrodes, a semiconductor pattern, and the semiconductor pattern and the gate electrode through said gate electrode coupled to the substrate stacked on the substrate. The charge storage layer has a first charge storage layer, the first is interposed between the first charge storage layer and the semiconductor pattern and the second energy band gap with the semiconductor pattern and is interposed between the gate electrodes a first energy bandgap having a second charge storage layer, and interposed between the first charge storage layer and the gate electrode includes a third charge storage layer and a third energy band gap. It said first energy band gap is smaller than the second and third energy band gaps. The thickness of the first charge storage layer is thicker than the thicknesses of the second and third charge storage layer.