High temperature performance of GaSe nanosheet based broadband photodetector

We made a report on the fabrication and characterization of mechanically exfoliated multilayered gallium selenide based metal-semiconductor-metal (MSM) photodetector using Ti/Au as metal contacts. A significant increase in photocurrent was observed when the photodetector was illuminated with 380 nm laser, giving out a photoresponsivity, external quantum efficiency and detectivity of 2.6 A/W, 850% and 1.0×10^12 Jones, respectively at a power density of 0.35 mW/cm^2 at room temperature. Experimentally, it was observed that the device shows high photoresponse in both UV and visible regions. The performance of this GaSe based photodetector was also checked at various temperatures, ranging from room temperature to 120 °C. It was found that the detector was thermally stable, giving out a maximum photoresponsivity of 4.5 A/W at 120 °C.