The limited-flux model: Deuterium in boron-doped crystalline silicon

Abstract In a medium that contains a high density of traps for the diffuser, the penetration speed is controlled by the time required to fill the traps. The predictions of the limited-flux model are verified in the deuterium transport in crystalline silicon highly doped with boron. The results also imply that the maximum amount of ‘mobile’ deuterium in crystalline silicon is below 1016cm−3, the detection level of secondary-ion mass spectroscopy.