Electrical investigations of Bi-doped BaTiO3 ceramics as a function of temperature

Abstract Polycrystalline Bi doped BaTiO 3 ceramics were fabricated through solid state sintering reaction method; Bi (NO 3 ) 3 ·5H 2 O at ( P 4/ mmm ) and cubic structures ( Pm -3m). Curie temperature was shifted from 120 to 160 °C with Bi doping. At higher temperatures, dielectric anomalies were observed. Room temperature resistivity (ρ 25 ) was found to decrease from 3.5 × 10 9 to 3.8 × 10 8 Ω  cm   at the present doping level. With increasing temperature, all specimens showed semiconductor behavior with negative temperature coefficient of resistivity (NTCR) characteristics. Conductivity followed the Arrhenius law with E a  = 0.2784–0.3210 and 1.189–1.1579 eV which can be attributed to the ionic conduction lined by V o · and V o · · . vacancies. Increasing drift mobility with Bi doping at higher temperatures focused the rise in conductivity. Well-defined hysteresis P-E loops measured at room temperature showed ferroelectric characteristics.