RF atomic power microscope scanning probe and preparation method thereof

The invention discloses an RF atomic power microscope scanning probe and a preparation method thereof. The preparation method comprises the main steps of: firstly, acquiring mesa isolation of an RF transmission line on a substrate made of high-resistance silicon-on-insulator materials through adopting photolithography and etching technologies; secondly, forming ohmic contact through adopting photolithography, electron beam evaporation and rapid annealing technologies; thirdly, acquiring the RF transmission line through adopting photolithography and electron beam evaporation technologies; and finally, forming the integral probe adopting photolithography etching technologies, wherein the integral probe comprises a probe body, a probe cantilever beam and a probe tip. When the obtained probe is used for performing reactance scanning on a sample, an RF circuit is extremely sensitive to reactance (capacitance and inductance), changes in surface reactance of the sample can cause capacitance to change, thus an RF resonant signal offsets. The high-speed characteristic of the RF circuit is utilized, the RF resonant signal serves as feedback, the problem of slow scanning of an atomic power microscope is solved, and the function of high-speed scan imaging is achieved.