Predictive simulation framework for boron diffused p+ layer optimization: Sensitivity analysis of boron tube diffusion process parameters of industrial n-type silicon wafer solar cells

Abstract A predictive simulation framework, combining process and device simulation, is developed in order to assist in BBr 3 boron tube furnace diffusion process optimization for n -type silicon wafer solar cells. After an appropriate calibration, the influence of the tube diffusion process parameters (drive-in temperature, oxidation temperature, etc) on the final solar cell efficiency can be predicted. The key process parameters of BBr 3 tube furnace diffusion are identified and their sensitivity on the final solar cell efficiency is calculated. An efficiency gain of 0.6% absolute to 20.0% is realized by optimizing only the front-side boron diffused layer of the front and back contacted cells. The efficiency is further improved to 20.9% by introduction of a local back-surface field design. A further optimization potential of up to 0.2% absolute is predicted by modifying the boron diffusion profile.