Электродинамические испытания силовых трансформаторов: основные требования к коммутационному оборудованию

Requirements for high-voltage power current functionality of the semiconductor key (HVPCSK) are given. The concept of switching capacity, serving the generalized characteristic HVPCSK and quantitative criterion for the comparative analysis of the various embodiments was used. The comparative evaluation of the switching power photothyristors, lockable thyristors with an integrated control unit, IGBT base having virtually the same diameter of a silicon wafer, and suitable for the construction of the power HVPCSK scheme is proposed. The calculated expression, allowing to define the necessary switching capacity and number of power semiconductor devices as a part of the known HVPCSK passport data subjects of power transformers. Two ways of HVPCSK use to conduct electrodynamic tests are proposed.