TiO2/BiVO4The preparation method of nano-array optoelectronic pole

The invention discloses a kind of TiO 2 /BiVO 4 Nano-array optoelectronic pole preparation method.TiO is prepared by sol-gal process first 2 Seed Layer colloidal sol；TiO is coated in FTO electro-conductive glass substrates using dip-coating method 2 Seed Layer, through Overheating Treatment after, by length have TiO 2 The electro-conductive glass of Seed Layer is placed on TiO 2 By hydro-thermal process in growth solution, TiO is obtained 2 Nanometer stick array；Using continuous ionic exchange process by BiVO 4 Nano-particle deposits to TiO 2 In nanometer rods, TiO is obtained 2 /BiVO 4 Nano-array optoelectronic pole.The preparation process is simple for providing of the invention is easily-controllable, equipment requirement is low.The TiO of preparation 2 /BiVO 4 Nano-array optoelectronic pole compares simple TiO 2 Optoelectronic pole visible absorption strengthens, and PhotoelectrocatalytiPerformance Performance is good.