Fabrication of 50-100 nm patterned InGaN blue light emitting heterostructures

Laterally ordered, patterned subwavelength sized nitride structures are of interest for novel blue/ultraviolet light emitters as spontaneous and stimulated emission may be enhanced in these artificial structures. In this work we present an approach to produce such small period of structure by electron beam lithography and pattern transfer from synthesizing self-organized porous alumina. The light emitting capability of such subwavelength scale structure with arrays of isolated MQW posts has been studied.