Toward fabrication of graphene based devices: Graphene transfer, processing, and characterization

The current work presents our group's progress toward a graphene transfer and graphene-Si junctions. We perform graphene transfer from copper to SiO2/Si and Si substrate using electrochemical delamination. We processed and characterized graphene on SiO2/Si and Si Finally we manufactured several junctions with graphene-Si. The I-V curve is symmetric with respect to the bias voltage, therefore one can infer that there is no Schottky contact at the interface. For larger bias voltages, the I-V characteristics are non-linear of second order.