Goos-Hänchen Shift at the Planar Interface of NID Dielectric and Topological Insulator

Abstract In the literature there exist two models for topological insulator (TI). Model I assumes TI as a nonreciprocal biisotropic material whereas model II accommodates conducting states in the boundary condition. In this paper using an existing mathematical formulation accommodating both models, Fresnel equations and Goos Hanchen shift at the interface of NID dielectric-TI are investigated. Furthermore, impact of NID and/or TI on the GHS of the reflected waves have also been studied and compared with the existing cases.