Simulation and electrical characterization of InN/InP diodes

ABSTRACTFabrication and electrical characterization of thin films obtained by the nitridation of InP (100) substrates in a Glow Discharge Source (GDS) are presented and discussed. The electrical parameters of InN/InP Schottky diode such as the saturation current (Is), barrier height (φb), ideality factor (n) and series resistance (Rs) were determined. These parameters were calculated using the current-voltage (I–V) characteristics and are compared with those obtained by an analytical model. This model was used in order to identify the transport phenomena. Semi-log forward I-V, Cheung functions and Norde methods were used in order to determine the series resistance Rs. The measured values of Is, (φb), and n for the studied sample are of 1.33 × 10−4 A cm−2, 0.46 eV and 3.31, respectively.