Abetter approach tomolecular implantation

A newapproach tomolecular implantation ispresented. Thisisbasedontheuseofcarborane, alarge and thermally stable boron molecule that canbeionized inastandard ionsource. Themodifications that areneeded toallow it torunonaVarian VIISta HCShighcurrent tool arediscussed. Dataispresented toshowthat thetool canusecarborane forhighproductivity, energy contamination free boron implants. Dataisalso presented todemonstrate that this additional capability doesnotchange thetool's performance forother species andimplants. Theoperation ofthetool isdescribed along withproductivity andprocess datafor32nmlogic applications. Electrical dataisalsopresented that illustrates excellent device performance.