Ultra-low threshold current density ZnCdSe SQW laser fabricated by implantation induced disordering

Implantation-induced disordering is applied to define laterally structured waveguiding in ZnCdSe single quantum well lasers. Owing to the intermixing-induced lateral step of the refractive index, the emission characteristics are significantly improved. A reduction in the threshold current density from 276 to 96 A/cm/sup 2/ is achieved.