RF performance of short channel graphene field-effect transistor

We have experimentally demonstrated the high performance short channel RF graphene device with cut-off frequency of 170 GHz on epitaxial graphene on SiC. We have also studied performance improvement by reducing contact resistance at lower measurement temperature for short channel device. The study shows continuous performance improvement can be achieved by proper channel length scaling and structure optimization such as self-aligned gate and technological solutions for contact resistance reduction.