Crystal growth in (GeS2)x(Sb2S3)1 − x thin films

The isothermal crystal growth kinetics of Sb2S3 in (GeS2)(x)(Sb2S3)(1 - x) thin films (x = 0.1, 0.2 and 0.3) has been investigated by static and high speed optical microscopy in a wide temperature range of 480-625 K allowing measurement of growth rates over four orders of magnitude. The formed crystals developed linearly with time, which is associated with crystal growth controlled by liquid-crystal interface kinetics. The appropriate growth model was derived from the dependence of reduced crystal growth rate on undercooling of the system, indicating that the 2D surface nucleated growth model is operative in this particular case. Thermodynamic and kinetic aspects are discussed. (C) 2014 Elsevier B.V. All rights reserved.