Symmetric SQW structure with low confinement factor for high power laser diodes

The paper presents a low confinement laser diode structure designed for high power operation. The attenuation coefficient is lower than 1 cm/sup -1/ and is probably due to free carrier absorption on injected carriers. The threshold current density is 800 A/cm/sup 2/ and the differential efficiency is 36% (both uncoated facets) for 5 mm long devices. The internal efficiency is 50%. All values are measured in pulsed conditions (100 ns pulse width, 1 kHz repetition rate).