Quantum Confinement of Hybrid Charge Transfer Excitons in GaN/InGaN/Organic Semiconductor Quantum Wells

We investigate hybrid charge transfer exciton (HCTE) confinement in organic–inorganic (OI) quantum wells (QWs) comprising a thin InGaN layer bound on one side by GaN and on the other by the organic semiconductors, tetraphenyldibenzoperiflanthene (DBP) or 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP). A binding energy of 10 meV is calculated for the Coulombically bound free HCTE state between a delocalized electron in GaN and a hole localized in DBP. The binding energy of the HCTE increases to 165 meV when the electron is confined to a 1.5 nm In0.21Ga0.79N QW (HCTEQW). The existence of the HCTEQW is confirmed by measuring the voltage-dependent DBP exciton dissociation yield at the OI heterojunction in the QW devices that decrease with increasing In concentration and decreasing electric field, matching the trends predicted by Poole–Frenkel emission. Combining spectroscopic measurements with optical models, we find that 14 ± 3% of the excitons that reach the GaN/DBP heterojunction form HCTEs and dissociate into...