Fast resistive switching in WO3 thin films for non-volatile memory applications

Tungsten trioxide (WO3) thin films with Pt and Cu electrodes are characterized regarding the suitability for nonvolatile memory applications. Cells down to 70 x 70 nm2 are fabricated by a combination of e-beam and nanoimprint lithography. The electrical measurements reveal good properties with switching currents of only 500 nA, fast SET and RESET switching down to 5 ns and retention for 10 4 s with a stable ROFF/RON ratio larger than 10 . Resistive switching; RRAM; solid electrolyte;