Spectroscopic ellipsometry of strained Si1-x Gex layers

Abstract Spectroscopic ellipsometry was used for the determination of optical parameters and thicknesses of Si-capped Si 1− x Ge x layers with x = 0.10, 0.16 and 0.20, grown by ultrahigh vacuum chemical vapour deposition. The parameters of the E 1 critical were determined together with the thicknesses of the surface natural oxide, the Si cap and the Si 1− x Ge x layers. The results were correlated with cross-section transmission electron microscopy, X-ray diffraction and reflectance measurements and compared with available data from literature.