Plasma-Enhanced Deposition of Silicon Nitride from SiH4?N2 Mixture

Excellent silicon nitride films which can be used as the gate insulator of an a-Si FET are fabricated by RF glow-discharge of SiH4–N2–H2 gas mixtures. Resistivity of larger than 1×1016 Ωcm and breakdown strength of 6×106 V/cm are realized. The optimum deposition conditions are evaluated and briefly discussed in connection with mechanisms of the plasma-enhanced deposition.