Effect of oxygen implantation upon secondary ion yields

The useful degree of ionization β+η of boron, present as a dopant in various substrates, has been measured using O+2 primary ions. The measurements also yielded β+η for the matrix elements and the steady‐state sputtering yield S of the substrate. Two SIMS instruments were employed in order to vary the bombardment parameters. Auger electron spectroscopy was used to measure the surface concentration of implanted oxygen. Neither this quantity nor (β+η)B are simply related to the inverse of S as has been proposed in the literature. Further, β+η of a matrix element, when referenced to the corresponding (β+η)B, does not exhibit an exponential variation with the ionization potential.