Characteristic temperature T/sub 0/ of Ga/sub 0.83/In/sub 0.17/As/sub 0.15/Sb/sub 0.85//Al/sub 0.27/Ga/sub 0.73/As/sub 0.02/Sb/sub 0.98/ injection lasers

Stripe injection lasers emitting at 2.18 mu m at room temperature with a threshold current density J/sub th/=7-9 kA/cm/sup 2/ have been prepared from Ga/sub 0.83/In/sub 0.17/As/sub 0.15/Sb/sub 0.85//Al/sub 0.27/Ga/sub 0.73/As/sub 0.02/Sb/sub 0.98/ double heterojunctions. The characteristic temperature T/sub 0/ of such devices measured between 80 K and 296 K was found to be T/sub 0/=90 K, essentially controlled by the Auger effect at high temperature. >