Non-volatile and volatile memory behaviour in oxygenated amorphous carbon electrochemical metallisation devices

The resistive switching behaviour of oxygenated amorphous carbon electrochemical metallisation devices is investigated. The effect of temperature on the microstructure and composition of the oxygenated carbon matrix is also investigated by annealing in situ in a transmission electron microscope. The devices exhibit controllable bipolar non-volatile and bi-directional volatile resistive switching behaviour that is dependent on the resistance state of the device and the polarity of the RESET voltage. The characteristics presented suggest suitability for incorporation into neuromorphic computing and memory storage technologies as memory cells, selector devices, or synaptic emulators.