Buried-oxide-in-drift-region technique for breakdown voltage of trench power MOSFETs

In this paper, we propose to add a BOXID at conventional Umosfet device in its drift region that shows an improvement in the breakdown performance as compared to the conventional trench device due to a reduction in the vertical electric field, and through the TCAD software to optimally adjust the position and thickness of the BOXID in the device. The simulation results show that in the two device on resistance is very similar, the Umosfet voltage of the device is increased from 33 V to 59 V, and the performance is stable.