Characterization of various micromachined integrated-circuit IR scene simulator array designs in the 3- to 5- and 8- to 12-μm bands

Various technologies have been used to achieve IR dynamic scene simulation for evaluation, testing and training for infrared imaging scene sensors. One of the most promising technologies is the use of arrays of resistively heated plates. This technology comes closest to matching the broadband IR spectra of scenes of interest to the IR sensor community. Recent advances in electronics fabrication techniques and especially in the micro-machining of silicon, are enabling arrays to be built with high pixel densities, low power requirements and reasonable cost. Characterization of these arrays is necessary to verify design models and assess process control and feasibility for applications. Reported here are measurements made on three pixel structures designs: bridge resistor, suspended membrane resistor, and post mounted membrane resistor. The bridge resistor and the suspended membrane resistor designs are prototypes; the post mounted membrane resistor is an experimental design. Measurements reported include: near field radiance distributions over the pixel areas with calculated effective fill factors, and rise and fall times in a 4 - 4.5 micrometer band; and near field and temperature measurements in the 8 - 12 micrometer band.