Strain state in Mn-implanted silicon annealed at high temperature

In recent years, much interest has been devoted to materials called diluted magnetic semiconductors (DMS): mixed crystals based on classic semiconductors, with a controlled fraction of nonmagnetic cations substituted by the magnetic ones [1]. Silicon-based DMS would be the preferred spintronics material due to existing technology used in Si-based microelectronics and wide availability of high quality Si single crystals. Dietl et al. [2] predicted a carrier-mediated ferromagnetism for silicon doped with 5 % Mn. For wide commercial application room-temperature ferromagnetism in DMS is desired. Zhang et al. [3] reported the Mn0.05Si0.95 alloy with Curie temperature, TC, of about 400 K.