Impact of embedded Mn-Nanodots on resistive switching in Si-rich oxides
2014
Mn-Nanodots with an areal dot density as high as ~2.4×10
11
cm
-2
and an average diameter of ~14 nm were fabricated on EB evaporated SiO
x
by remote H
2
plasma treatment. The embedding of Mn-nanodots in SiO
x
was effective to reduce the dispersions of operation voltages and ON/OFF ratio in resistance.
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