Impact of embedded Mn-Nanodots on resistive switching in Si-rich oxides

Mn-Nanodots with an areal dot density as high as ~2.4×10 11 cm -2 and an average diameter of ~14 nm were fabricated on EB evaporated SiO x by remote H 2 plasma treatment. The embedding of Mn-nanodots in SiO x was effective to reduce the dispersions of operation voltages and ON/OFF ratio in resistance.