600V / 100A Broad-Buffer Diode

600V/100Amps broad-buffer diode has been investigated. The pinning effect of space-charge extension has been optimized to inhibit snappy recovery under high conunutating di/dt condition (> 4000A/(mus cm 2 )), so that the reverse recovery loss has been dramatically reduced with decreasing the thickness of N- drift layer. The turn-on loss of the IGBT has been also cut down with degreasing gate resistance under 10 Omega, without abrupt spike of cathode-anode voltage waveform during reverse recovery. Both the decrease in turn-on loss and the suppression of snappy recovery would bring the reduction of 10% in PWM inverter loss.