White Noise Characterization of N-MOSFETs for Physics-Based Cryogenic Device Modeling

2021 
We propose a methodology of variable-temperature broadband noise characterization for cryogenic MOSFETs. A DUT is mounted on a reusable PCB vehicle with a built-in low-noise amplifier, and loaded into a cryogenic chamber. Using the vehicle, we measured flicker (low frequency) and white noise, and have successfully revealed dominance of shot noise in the temperature range from 300 to 120 K for the first time.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    2
    References
    0
    Citations
    NaN
    KQI
    []