Dependency of Boron Doping Efficiency on Hydrogen Flow Rate in Hydro-Fluorinated Amorphous Silicon

Boron-doping properties of hydro-fluorinated amorphous silicon (a-Si:F:H) films, produced by a glow-discharge decomposition of intermediate species SiF2 and H2 gas mixture, were studied for various deposition conditions. It was found that the boron-doping efficiency in a-Si:F:H depends on the hydrogen flow rate during deposition, that is, on the H content or H-related structure in the film. Thus, it was indicated that a deposition method in which the hydrogen flow rate can be widely adjusted is desirable for highly efficient doping of boron in hydro-fluorinated amorphous semiconductors.