Formation of silicon tips with <1 nm radius

Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5‐μm‐high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.