Comparison of O 2 and H 2 O as oxygen source for homoepitaxial growth of β-Ga 2 O 3 layers by halide vapor phase epitaxy

Keita Konishi,Ken Goto,Rie Togashi,Hisashi Murakami,Masataka Higashiwaki,Akito Kuramata,Shigenobu Yamakoshi,Bo Monemar,Yoshinao Kumagai

Comparison of O 2 and H 2 O as oxygen source for homoepitaxial growth of β-Ga 2 O 3 layers by halide vapor phase epitaxy

2018

Keita Konishi
Ken Goto
Rie Togashi
Hisashi Murakami
Masataka Higashiwaki
Akito Kuramata
Shigenobu Yamakoshi
Bo Monemar
Yoshinao Kumagai

Homoepitaxial growth of p-Ga2O3 layers by halide vapor phase epitaxy (HVPE) using O-2 or H2O as an oxygen source was investigated by thermodynamic analysis, and compared with measured properties af ...

Keywords:

Oxygen
Chemistry
Epitaxy
Inorganic chemistry
Halide
Quartz
Impurity
Deposition (law)
Hydrogen
Decomposition

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