Process for the self-limiting etching multilevel

Method for producing patterns comprising inclined flanks from one side of a substrate, characterized in that it includes: forming a mask (230) of protection covering at least two areas (220) of the hidden face of the substrate and defining at least one intermediate space; Etching with a plasma-forming, on at least one intermediate space, at least one inclined flank from each masked zone (220), the etching comprising forming a passivation layer (440) continuously on the inclined flanks producing self-limitation of etching when inclined flanks meet.