Design and Process for Self-Aligned InP/InGaAs SHBT Structure

A traditional base-emitter contact self-aligned structure as well as an improved one is designed and processed for InP/InGaAs SHBT based on wet chemical anisotropy etching experiment of InP.The effect of shorting the gap between the base contact and the emitter mesa for the two structures is compared,which provides the effective method for high frequency devices.