P‐20: Highly Stable Amorphous Indium Gallium Zinc Oxide Thin‐Film Transistors with N2O Plasma Treatment

Amorphous InGaZnO4 (a-IGZO) thin film transistors (TFTs) are promising devices in backplane technology. Since a-IGZO TFTs are very sensitive to the fabrication processes, they need stable process to keep their initial deposition properties. Herein we improved the stability of a-IGZO by applying N2O plasma. The stability characteristic of a-IGZO TFT was improved with N2O plasma. Vth shift was 1.5V for 10,000s under NBTS with illumination which was the best result in the world.