Defect production in silicon implanted with 13.6 MeV boron ions

Abstract EPR measurements, spreading resistance and optical reflectivity profilometry of silicon irradiated with 13.6 Me V boron ions within a dose range 10 13 to 2 × 10 15 cm −2 have been performed. It is shown that the defect production depends on both electronic and nuclear stopping powers and does not lead to the creation of amorphous layers but only precursors of the amorphous phase regions even at the highest dose 2 × 10 15 cm −2 . The asymmetrical profile of the electrically active implanted boron with a tail towards the bulk of the substrate is explained by channelling of swift ions through latent tracks. Point defects produced by high energy ion irradiation are found to be responsible for the increase of the chemical resistance of silicon in the irradiated layer.