Performances of GeSnSbTe Material for High-Speed Phase Change Memory

In this paper, a new application of phase change material GeSnSbTe (GSST) is proposed for high-speed phase-change memory (PCM). The device characteristics of PCM employing GeSnSbTe and conventional Ge 2 Sb 2 Te 5 (GST) are compared. Because of high crystallization speed, the GSST device demonstrates the benefits of shorter SET pulse, lower SET current, and higher resistance ratio.