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極薄膜NO Oxynitrideゲート絶縁膜とNi SALICIDEプロセスを用いた高性能35nmゲート長CMOS
極薄膜NO Oxynitrideゲート絶縁膜とNi SALICIDEプロセスを用いた高性能35nmゲート長CMOS
2002
satosi inaba
ou syun okano
satosi matuda
mi fuziwara
mei hokazono
kan na adati
kazuya oouti
hiroyuki sudou
taisin fukui
takasi simizu
sinzi mori
hideki koguma
atusi murakosi
kouzi itani
tosihiko iinuma
tomoyasu kudou
hideki sibata
syuuiti taniguti
T. Matsushita
tosiyuki umakosi
yumi watanabe
mariko takayanagi
atusi higasi
hisato oyamatu
kyouiti su kuro
yasuhiro katumata
yosiaki toyosima
hidemi isiuti
Keywords:
Artificial intelligence
Computer science
Machine learning
Salicide
CMOS
Electronic engineering
Computer architecture
Correction
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